模拟/射频集成电路设计的晶体管级建模

出版时间：2007-1  出版社：科学出版社  作者：格宾斯基  页数：293  字数：481000  

内容概要

器件的模型一直是模拟／射频集成电路工程师关心的问题。是否能建立一个尽可能反映器件行为的模型关系到整个集成电路设计的成败。本书内容丰富，从主流模型的讨论到小尺寸器件模型和量子效应的介绍，从模型参数的提取方法到模型在硬件描述语言中的应用等方面都作了详细的论述。本书对设计工程师和器件工程师都有很好的参考价值。

书籍目录

ForewordHiroshi IwaiIntroductionWladek Grabinski, Bart Nauwelaers and Dominique Schreurs1 2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures  Daniel Donoval, Andrej Vrbicky, Ales Chvala, and Peter Beno2 PSP: An advanced surface-potential-based MOSFET model  R. van Langevelde, and G. Gildenblat3 EKV3.0: An advanced charge based MOS transistor model. A design-oriented MOS transistor compact model for next generation CMOS  Matthias Bucher, Antonios Bazigos, Francois Krummenacher,Jean-Micehl Sallese, and Christian Enz4 Modelling using high-frequency measurements  Dominique Schreurs5 Empirical FET models  Iltcho Angelov6 Modeling the SOI MOSFET nonlinearities. An empirical approach  B. Parvais, A. Siligaris7 Circuit level RF modeling and design   Nobuyuki Itoh8 On incorporating parasitic quantum effects in classical circuit simulations  Frank Felgenhauer, Maik Begoin and Wolfgang Mathis9 Compact modeling of the MOSFET in VHDL-AMS  Christophe Lallement, Francois Pecheux, Alain Vachoux and Fabien Pregaldiny10 Compact modeling in Verilog-A  Boris Troyanovsky, Patrick O'Halloran and Marek MierzwinskiIndex

用户评论 (总计3条)

•   但是内容的实用性不是很强的
•   很不错，值得看
•   管级建模的好参考