Hydrogenated Amorphous Silicon氢化非晶硅

出版时间：2005-9  作者：Street, R.A.  页数：417  

内容概要

Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. The emphasis is on the optical and electronic properties that result from the disordered structure. The second part of the book describes electronic conduction, recombination, interfaces, and multilayers. The special attribute of a-Si:H which makes it useful is the ability to deposit the material inexpensively over large areas, while retaining good semiconducting properties, and the final chapter discusses various applications and devices.

书籍目录

Preface1　Introduction　1.1　Early research　1.2　Basic concepts of amorphous semiconductors　　1.2.1　Atomic structure　　1.2.2　Chemical bonding, the 8-N rule and defect reactions　　1.2.3　Electronic structure　　1.2.4　Electronic properties　　1.2.5　Localization, the mobility edge and conduction2　Growth and structure of amorphous silicon　2.1　Growth of a-Si: H　　2.1.1　The morphology of film growth　　2.1.2　Growth mechanisms　2.2　 The silicon bonding structure　　2.2.1　Silicon-silicon atomic bonding　　2.2.2　Intermediate range order, network voids and stress　　2.2.3　Network vibrations　2.3　 The hydrogen bonding structure　　2.3.1　Silicon-hydrogen bonds　　2.3.2　The hydrogen local order　　2.3.3　Hydrogen diffusion, evolution and rehydrogenation　　2.3.4　The role of hydrogen in the growth of a-Si : H　　2.3.5　Hydrogen in amorphous and crystalline silicon3　The electronic density of states　3.1　The conduction and valence bands　　3.1.1　Measurements of the conduction and valence band density of states　3.2 The band tails　　3.2.1 Dispersive trapping in a band tail　　3.2.2  The band tail density of states distribution　3.3　 0ptical band.t0.band transitions　　3.3.1  The Urbach edge　　3.3.2 Thermal and static disorder4　Defects and their electronic states　4.1　Defects in amorphous semiconductors　　4.1.1 Lattice relaxation at defects　　4.1.2  Correlation energies　　4.1.3  Valence alternation pairs—the example of selenium　4.2　Experimental measurements of defects　　4.2.1  Electron spin resonance(ESR)　　4.2.2  ESR hyperfine interactions　　4.2.3 Defect level spectroscopy—thermal emission energies　　4.2.4 Defect level spectroscopy—optical transition energms　　4.2.5  Summary　4.3　Defect Models5　Substitutional doping　5.1　Growth and structure of doped a.Si：H　5.2　The electronic effects of doping　　5.2.1　Defects induced by doping　　5.2.2  Shallow electronic states　　5.2.3　The doping efficiency　　5.2.4  Compensated a.Si：H　5.3　The doping mechanism　　5.3.1 Discussion of the doping model6 Defect reactions，thermal equilibrium and metastability　6.1　 Evidence of structural equilibration　6.2　Thermal equilibrium models　　6.2.1　Theory of chemical equilibrium　　6.2.2　DefeCt and dopant equilibrium with discrete formation energies　　6.2.3 Distributions of formation energies——the weak bond model　　6.2.4 The role of the band tails and deposition conditions　　……7  Electronic transport8  The recombination of excess carriers9  Contacts,interfaces and multilayers10  Amorphous silicon device technologyReferencesIndex